Design of RTD-Based TSRAM

作     者：程玥 潘立阳 许军 Cheng Yue;Pan Liyang;Xu Jun

作者机构：清华大学微电子学研究所北京100084 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2004年第25卷第2期

页      码：138-142页

摘      要：A RTD-based TSRAM cell is *** mechanism of different types of access transistors in this cell is described and NMOS is found most suitable from consideration of the cell size and power *** architecture of a TSRAM system is *** results show that the RTD-based TSRAM has advanced characteristics of small area,low power,and high speed.

主 题 词：RTD TSRAM high speed low power 

学科分类：080903[080903] 0809[工学-计算机类] 08[工学] 080501[080501] 0805[工学-能源动力学] 080502[080502] 

核心收录：

D　O　I：10.3969/j.issn.1674-4926.2004.02.004

馆 藏 号：203101368...