具有非平面栅极配置的高电流MoS_(2)晶体管

作     者：林均 王滨 杨振宇 李国立 邹旭明 柴扬 刘兴强 廖蕾 Jun Lin;Bin Wang;Zhenyu Yang;Guoli Li;Xuming Zou;Yang Chai;Xingqiang Liu;Lei Liao

作者机构：Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education&Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and DevicesSchool of Physics and ElectronicsHunan UniversityChangsha 410082China Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHong KongChina College of Microtechnology&NanotechnologyQingdao UniversityQingdao 266071China State Key Laboratory for Chemo/Biosensing and ChemometricsSchool of Physics and ElectronicsHunan UniversityChangsha 410082China 

基　　金：supported by the National Key Research and Development Program of China(2018YFA0703704 and2018YFB0406603) China National Funds for Distinguished Young Scientists(61925403) the National Natural Science Foundation of China(61851403,51872084,61704052,61811540408,and61704051) the Strategic Priority Research Program of Chinese Academy of Sciences(XDB30000000) in partly by the Key Research and Development Plan of Hunan Province(2018GK2064) 

出 版 物：《Science Bulletin》 (科学通报（英文版）)

年 卷 期：2021年第66卷第8期

页      码：777-782,M0003页

摘      要：减小沟道材料的厚度并针对栅极结构进行合理设计,有利于增强短沟道场效应晶体管的栅极控制能力.二维半导体具有优异的电学性能,其原子级别的厚度可以实现较强的栅极耦合效果.我们研制了具有Ω型非平面栅极结构的Mo S_(2)晶体管,实现了局部栅极耦合效应的增强,Mo S_(2)顶栅晶体管的跨导达到32.7μS/μm,饱和电流高达0.89 A/μm.在此基础上,我们设计了非门反相器,其电压增益为26.6,噪声迁移达到89%,与非门器件实现了基本的逻辑功能.本文为研制高性能二维半导体场效应晶体管提供了新思路.

主 题 词：场效应晶体管 电压增益 与非门 反相器 逻辑功能 耦合效果 跨导 非平面 

学科分类：080903[080903] 0809[工学-计算机类] 08[工学] 080501[080501] 0805[工学-能源动力学] 080502[080502] 

核心收录：

D　O　I：10.1016/j.scib.2020.12.009

馆 藏 号：203101419...