A radiation-hardened-by-design technique for suppressing SET in charge pump of PLL frequency synthesizer

作     者：HAN BenGuang GUO ZhongJie WANG XiHu WU LongSheng LIU YouBao 

作者机构：Xi'an Microelectronic Technology Institute 

基　　金：supported by the Nation Twelfth Five-Year Plan (Grant No.11015131) 

出 版 物：《Science China(Technological Sciences)》 (中国科学（技术科学英文版）)

年 卷 期：2013年第56卷第2期

页      码：286-292页

摘      要：This paper presents a single event transient(SET) suppressor circuit,which can suppress the effect of SET in charge pump(CP) on the whole PLL frequency synthesizers,and at the same time it brings little negative effect to the system during normal *** the proposed SET suppressor circuit only includes a resistor,a PMOS and an NMOS device,little area penalty is *** preventing SET propagating from CP to low pass filter(LPF) and VCO when a single event strikes on CP output node,the system shows excellent hardness to SET in *** simulations are performed on TCAD *** results show that a single event with an LET at 80 MeV cm 2 /mg can only induce approximately 2.3 mV disturbance on the control voltage of VCO.

主 题 词：radiation-hardened-by-design (RHBD) single event (SE) single event transient (SET) radiation effects phase-lockedloops frequency synthesizer 

学科分类：11[军事学] 0810[工学-土木类] 1105[1105] 080902[080902] 0809[工学-计算机类] 08[工学] 081002[081002] 110503[110503] 

核心收录：

D　O　I：10.1007/s11431-012-5086-0

馆 藏 号：203101784...