Artificial nociceptor based on TiO nanosheet memristor

作     者：Jinling Lan Gang Cao Jingjuan Wang Xiaobing Yan 兰晋玲;曹刚;王静娟;闫小兵

作者机构：Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei ProvinceCollege of Electron and Information EngineeringHebei UniversityBaoding 071002China Department of Materials Science and EngineeringNational University of SingaporeSingapore 117576Singapore 

基　　金：financially supported by the National Natural Science Foundation of China(61674050 and 61874158) the Project of Distinguished Youth of Hebei Province(A2018201231) the Hundred Persons Plan of Hebei Province(E2018050004 and E2018050003) the Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province(SLRC2019018) the Special Project of Strategic Leading Science and Technology of Chinese Academy of Sciences(XDB44000000-7) the Outstanding Young Scientific Research and Innovation Team of Hebei University the Highlevel Talent Research Startup Project of Hebei University(521000981426) the Special Support Funds for National High Level Talents(041500120001 and 521000981429) 

出 版 物：《Science China Materials》 (中国科学（材料科学（英文版）)

年 卷 期：2021年第64卷第7期

页      码：1703-1712页

摘      要：With the development of technology,the learning and memory functions of artificial memristor synapses are necessary for realizing artificial neural networks and neural neuromorphic *** to their high scalability performance,nanosheet materials have been widely employed in cellular-level learning,but the behaviors of nociceptor based on nanosheet materials have rarely been ***,we present a memristor with an Al/TiO_(2)/Pt *** electroforming,the memristor device showed a gradual conductance regulation and could simulate synaptic functions such as the potentiation and depression of synaptic *** also designed a new scheme that verifies the pain sensitization,desensitization,allodynia,and hyperalgesia behaviors of real nociceptors in the fabricated *** with these behaviors can significantly improve the quality of intelligent electronic *** fitting showed that the high resistance and low resistance states were consistent with the hopping conduction *** work promises the application of TiO_(2)-based devices in next-generation neuromorphological systems.

主 题 词：nanosheets nociceptor memristors artificial synapses sensitization 

学科分类：080903[080903] 0809[工学-计算机类] 07[理学] 08[工学] 070205[070205] 080501[080501] 0805[工学-能源动力学] 0702[理学-物理学类] 

核心收录：

D　O　I：10.1007/s40843-020-1564-y

馆 藏 号：203102172...