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Design Near-threshold Photoelectron Imaging Spectrometer Based on UV Laser Induced Photoelectron Emission Anion Source

Design Near-threshold Photoelectron Imaging Spectrometer Based on UV Laser Induced Photoelectron Emission Anion Source

作     者:Zheng-bo Qin Xia Wu Zi-chao Tang 

作者机构:State Key Laboratory of Molecular Reaction Dynamics Dalian Institute of Chemical Physics ChineseAcademy of Sciences Dalian 115023 China 

基  金:国家自然科学基金 the Ministry of Science and Technology of China, and the Chinese Academy of Sciences 

出 版 物:《Chinese Journal of Chemical Physics》 (化学物理学报(英文))

年 卷 期:2013年第26卷第6期

页      码:774-779,I0005页

摘      要:We have developed a compact photoelectron imaging facility, including an anion source with dissociative photoelectron attachment to molecules, a linear time-of-flight mass spec-trometry (TOFMS), and an orthogonal high-resolution threshold photoelectron velocity map imaging spectrometer (VMI). Intense and cold cluster anions were prepared in photoelectron- attachment processes upon pulsed UV laser ablation of metal target. Combining this anion source with TOFMS-VMI, the achieved mass resolution is about 200, and the electron ki- netic energy resolution is better than 3%, i.e., 30 meV for 1 eV electrons. More importantly, low-energy photoelectron imaging spectra for CH3S- and S2- at 611.46 nm are obtained. In both cases, the refined electron affinities are determined to be 1.86264-0.0020 eV for CH3S and 1.67444-0.0035 eV for S2, respectively. Preliminary results suggest that the apparatus is a powerful tool for estimating precise electron affinities values from threshold photoelectron imaging spectroscopy.

主 题 词:Threshold photoelectron imaging Dissociative photoelectron attachment Laser induced photoelectron emission 

学科分类:080901[080901] 0809[工学-计算机类] 08[工学] 080401[080401] 0804[工学-材料学] 0803[工学-仪器类] 

核心收录:

D O I:10.1063/1674-0068/26/06/774-779

馆 藏 号:203102750...

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