Ultrathin 2D ternary Bi_(2)Te_(2)Se flakes for fast-response photodetectors with gate-tunable responsivity

作     者：Peng Luo Ke Pei Fakun Wang Xin Feng Huiqiao Li Xitao Liu Junhua Luo Tianyou Zhai 罗鹏;裴颗;王发坤;冯昕;李会巧;刘希涛;罗军华;翟天佑

作者机构：State Key Laboratory of Materials Processing and Die&Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and TechnologyWuhan 430074China State Key Laboratory of Structural ChemistryFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhou 350002China 

基　　金：supported by the National Natural Science Foundation of China (21825103) Hubei Provincial Natural Science Foundation of China (2019CFA002) the Fundamental Research Funds for the Central Universities (2019kfy XMBZ018) 

出 版 物：《Science China Materials》 (中国科学（材料科学（英文版）)

年 卷 期：2021年第64卷第12期

页      码：3017-3026页

摘      要：Two-dimensional(2D) ternary materials have sprung up in a broad variety of optoelectronic applications due to their robust degree of freedom to design the physical properties of the materials through adjusting the stoichiometric ratio. However, the controlled growth of high-quality 2D ternary materials with good chemical stoichiometry remains challenging, which severely impedes their further development and future device applications. Herein, we synthesize ternary Bi_(2)Te_(2)Se(BTS) flakes with a thickness down to 4 nm and a lateral dimension about 60 μm by an atmospheric-pressure solid source thermal evaporation method on a mica substrate. The phonon vibration and electrical transportation of 2D BTS are respectively investigated by temperature-dependent Raman spectrum and conductivity measurements. Furthermore, the photodetector based on 2D BTS exhibits excellent performance with a high light on/off ratio of 1300(365 nm), a wide spectral response range from 365 to 980 nm, and an ultra-fast response speed up to 2 μs. In addition, its electrical and photoelectric properties can be modulated by the gate voltage, offering an improved infrared responsivity to 2.74 A W^(-1) and an on/off ratio of 2266 under 980 nm. This work introduces an effective approach to obtain 2D BTS flakes and demonstrates their excellent prospects in optoelectronics.

主 题 词：2D materials ternary materials Bi_(2)Te_(2)Se photodetectors field-effect transistors 

学科分类：07[理学] 070205[070205] 08[工学] 080501[080501] 0805[工学-能源动力学] 0803[工学-仪器类] 0702[理学-物理学类] 

核心收录：

D　O　I：10.1007/s40843-021-1695-x

馆 藏 号：203103850...