Ultrawide-bandgap(6.14 eV)(AlGa))_(2)O_(3)/Ga_(2)O_(3)heterostructure designed by lattice matching strategy for highly sensitive vacuum ultraviolet photodetection

作     者：Yuqiang Li Dan Zhang Lemin Jia Siqi Zhu Yanming Zhu Wei Zheng Feng Huang 李宇强;张丹;贾乐敏;朱思琪;朱燕明;郑伟;黄丰

作者机构：State Key Laboratory of Optoelectronic Materials and TechnologiesSchool of MaterialsSun Yat-sen UniversityGuangzhou 510275China 

基　　金：supported by the National Natural Science Foundation of China(91833301 and 61427901) Guangdong Natural Science Funds for Distinguished Young Scholars(2021B1515020105) Guangdong Basic and Applied Basic Research Foundation(2019A1515110916) 

出 版 物：《Science China Materials》 (中国科学（材料科学（英文版）)

年 卷 期：2021年第64卷第12期

页      码：3027-3036页

摘      要：One judiciously designed strategy of utilizing an ultrathin but conductive Ga_(2)O_(3):Si nanolayer to prepare(AlGa)_(2)O_(3)crystalline film is *** from the existence of Ga_(2)O_(3):Si nanolayer,a high-quality(Al_(0.68)Ga_(0.32))_(2)O_(3)sesquioxide film with 68 at.%aluminum was epitaxially grown on sapphire substrates,which was characterized by high-resolution transmission electron microscopy,X-ray photoelectron spectroscopy and X-ray *** bandgap was broadened to 6.14 eV,and a vacuum ultraviolet(VUV)(AlGa)_(2)O_(3)/Ga_(2)O_(3):Si photodetector was subsequently *** detector exhibits a pretty high on-off ratio of about 10^(3),an open-circuit voltage of 1.0 V and a responsivity of 8.1 mA W^(-1) at 0 V bias *** performances imply that the proposed strategy is valuable for improving the quality and also adjusting the bandgap of(AlGa)_(2)O_(3)sesquioxides,which is expected to facilitate their application in VUV photodetection.

主 题 词：(AlGa)_(2)O_(3) ultrawide bandgap vacuum ultraviolet photovoltaic detector 

学科分类：080901[080901] 0809[工学-计算机类] 08[工学] 080401[080401] 0804[工学-材料学] 080501[080501] 0805[工学-能源动力学] 0803[工学-仪器类] 

核心收录：

D　O　I：10.1007/s40843-021-1698-3

馆 藏 号：203104007...