An optimized junctionless GAA MOSFET design based on multi-objective computation for high-performance ultra-low power devices

作     者：T.Bendib F.Djeffal M.Meguellati 

作者机构：LEADepartment of ElectronicsUniversity of BatnaBatna 05000Algeria 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2014年第35卷第7期

页      码：42-47页

摘      要：An analytical investigation has been proposed to study the subthreshold behavior ofjunctionless gates all around （JLGAA） MOSFET for nanoscale CMOS analog applications. Based on 2-D analytical analysis, a new subthreshold swing model for short-channel JLGAA MOSFETs is developed. The analysis has been used to calculate the subthreshold swing and to compare the performance of the investigated design and conventional GAA MOSFET, where the comparison of device architectures shows that the JLGAA MOSFET exhibits a superior performance with respect to the conventional inversion-mode GAA MOSFET in terms of the fabrication process and electrical behavior in the subthreshold domain. The analytical models have been validated by 2-D numerical simulations. The proposed analytical models are used to formulate the objectives functions. The overall objective function is formulated by means of a weighted sum approach to search the optimal electrical and dimensional device parameters in order to obtain the better scaling capability and the electrical performance of the device for ultra-low power applications.

主 题 词：junctionless optimization subthreshold nanoscale multiobjective 

学科分类：080903[080903] 0808[工学-自动化类] 0809[工学-计算机类] 08[工学] 080501[080501] 0805[工学-能源动力学] 080502[080502] 0703[理学-化学类] 0702[理学-物理学类] 

核心收录：

D　O　I：10.1088/1674-4926/35/7/074002

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