Design of 32 kbit one-time programmable memory for microcontroller units

作     者：JEON Hwang-gon CHOI In-hwa HA Pan-bong KIM Young-hee 

作者机构：Department of Electronic EngineeringChangwon National University9 Sarim-DongChangwon 641-773Korea 

基　　金：Project supported by the Second Stage of Brain Korea 21 Projects Korea 

出 版 物：《Journal of Central South University》 (中南大学学报（英文版）)

年 卷 期：2012年第19卷第12期

页      码：3475-3483页

摘      要：A 32 kbit OTP(one-time programmable)memory for MCUs(micro-controller units)used in remote controllers was *** OTP memory is used for program and data *** is required to apply 5.5V to BL(bit-line)and 11V to WL(word-line)for a OTP cell of 0.35μm ETOX(EEPROM tunnel oxide)type by *** use 5V transistors on column data paths to reduce the area of column data paths since they require small *** addition,we secure device reliability by using HV(high-voltage)transistors in the WL ***,we change from a static logic to a dynamic logic used for the WL driver in the core ***,we optimize the WD(write data)switch ***,we can implement them with a small-area *** addition,we implement the address predecoder with a small-area logic *** area of the designed 32 kbit OTP with 5V and HV devices is 674.725μm×258.75μm(=0.1745mm2)and is 56.3% smaller than that using 3.3V devices.

主 题 词：one-time programmable memory micro controller unit EEPROM tunnel oxide small-area 

学科分类：08[工学] 081201[081201] 0812[工学-测绘类] 

核心收录：

D　O　I：10.1007/s11771-012-1432-4

馆 藏 号：203105769...