A fully monolithic 0.18 μm SiGe BiCMOS power amplifier design

作     者：陈磊 阮颖 苏杰 张书霖 石春琦 赖宗声 

作者机构：Institute of Microelectronics Circuit & SystemEast China Normal University 

基　　金：Project supported by the National Key Project of China(No.2009ZX01034-002-002-001) the Applied Material Foundation of Shanghai, China(Nos.08706200802,08700741300,09700713800) the Shanghai Leading Academic Discipline Project,China(No.B411) 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2011年第32卷第5期

页      码：99-103页

摘      要：A fully monolithic power amplifier （PA） for multi-mode front end IC integration is presented. The PA is fabricated in an IBM 7WL 0.18 μm SiGe BiCMOS process with all the matching networks integrated on a chip. After load-pull test to find the best power stage size and layout optimization, the measured results show that the PA can obtain a 24 dBm maximum output power at 2.4 GHz, the output 1 dB compression point is 21 dBm at 5 dBm input, and the PAE is 18%. This PA is complete on-chip tested without any bonding wires and on-board matching, targeting fully power module integration in multi-mode system on chip.

主 题 词：SiGe BiCMOS power amplifier monolithic multi-mode 

学科分类：080903[080903] 080902[080902] 0809[工学-计算机类] 08[工学] 

核心收录：

D　O　I：10.1088/1674-4926/32/5/055005

馆 藏 号：203107830...