AlGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band

作     者：姚小江 李宾 陈延湖 陈小娟 魏珂 李诚瞻 罗卫军 王晓亮 刘丹 刘果果 刘新宇 Yao Xiaojiang;Li Bin;Chen Yanhu;Chen Xiaojuan;Wei Ke;Li Chengzhan;Luo Weijun;Wang Xiaoliang;Liu Dan;Liu Guoguo;Liu Xinyu

作者机构：中国科学院微电子研究所北京100029 四川龙瑞微电子有限公司成都610041 中国科学院半导体研究所北京100083 

基　　金：国家重点基础研究发展计划(批准号:2002CB311903) 中国科学院重点创新工程(批准号:KGCX2-SW-107)资助项目 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2007年第28卷第4期

页      码：514-517页

摘      要：A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10 × 120μm transistors. A Wilkinson splitters and combining were used to divide and combine the power. By biasing the amplifier at VDS = 40V, IDS = 0.9A, a maximum CW output power of 41.4dBm with a maximum power added efficiency （PAE） of 32.54% and a power combine efficiency of 69% was achieved at 5.4GHz.

主 题 词：AlGaN/GaN HEMTs power combining MIC power amplifiers 

学科分类：080902[080902] 0809[工学-计算机类] 08[工学] 

核心收录：

D　O　I：10.3969/j.issn.1674-4926.2007.04.008

馆 藏 号：203108592...