Design and optimization of DBR in 980 nm bottom-emitting VCSEL

作     者：LI Te NING YongQiang HAO ErJuan CUI JinJiang ZHANG Yan LIU GuangYu QIN Li LIU Yun WANG LiJun CUI DaFu XU ZuYan 

作者机构：Key Laboratory of Excited State Processes Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy ofSciences Changchun 130033 China Heping Campus Jilin University Changchun 130033 China Institute of Physics Chinese Academy of Sciences Beijing 100080 China 

基　　金：Supported partially by the National Natural Science Foundation of China (Grant Nos. 60636020  60676034  60577003  60706007) 

出 版 物：《Science in China(Series F)》 (中国科学（F辑英文版）)

年 卷 期：2009年第52卷第7期

页      码：1266-1271页

摘      要：According to the theory of DBR, with the P-type DBR as an example, the electrical characteristics and optical reflection of the DBR are analyzed by studying the energy band structure with various graded region widths and doping densities. The width and doping density of graded region are decided through a comparative study. The P-type DBR of 980 nm VCSELs is designed with Al0.9Ga0.1As and Al0.1Ga0.9As selected as the high and low refractive index material for the DBR. The 980 nm bottom VCSELs, which consists of 30 pairs P-type DBR and 28 pairs N-type DBR, are then fabricated. In P-type DBR, the width of graded region is 0.02 μm and the uniformity doping concentration is 2.5×10^18cm^-3. Its reflectivity is 99.9%. In N-type DBR, the width of graded region is also 0.02 μm and the uniformity doping concen- tration is 2×10^18cm^-3. Its reflectivity is 99.3%. The I-V curve shows that the series resistance of the device is about 0.05Ω. According to the theory of DBR, with the P-type DBR as an example, the electrical characteristics and optical reflection of the DBR are analyzed by studying the energy band structure with various graded region widths and doping densities. The width and doping density of graded region are decided through a comparative study. The P-type DBR of 980 nm VCSELs is designed, with Al0.9Ga0.1As and Al0.1Ga0.9As selected as the high and low refractive index material for the DBR. The 980 nm bottom VCSELs, which consist of 30 pairs P-type DBR and 28 pairs N-type DBR, are then fabricated. In P-type DBR, the width of graded region is 0.02μm and the uniformity doping concentration is 2.5×10^18cm^-3. Its reflectivity is 99.9%. In N-type DBR, the width of graded region is also 0.02 μm and the uniformity doping concentration is 2×10^18cm^-3. Its refiectivity is 99.3%. The I-V curve shows that the series resistance of the device is about 0.05Ω.

主 题 词：VCSEL DBR component graded series resistance reflectivity 

学科分类：0808[工学-自动化类] 080901[080901] 0809[工学-计算机类] 08[工学] 0810[工学-土木类] 080401[080401] 081402[081402] 0804[工学-材料学] 081304[081304] 0813[工学-化工与制药类] 0803[工学-仪器类] 0814[工学-地质类] 0812[工学-测绘类] 

核心收录：

D　O　I：10.1007/s11432-009-0073-1

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