Design and Realization of InP/AlGaInAs MultipleQuantum Well Ring Laser
作者机构：School of Electronic In formation EngineeringTianjin UniversityTianjin 300072China The 13th Research Institute of China Electronic Technology Group CorporationShijiazhuang 050051China
基 金：Supported by the National Natural Science Foundation of China(No.61106052)
出 版 物：《Transactions of Tianjin University》 (天津大学学报（英文版）)
年 卷 期：2014年第20卷第6期
页 码：402-406页
摘 要：Using beam propagation method （BPM）, key optical design parameters of InP/AlGaInAs multiple quantumwell （MQW） ring laser were numerically analyzed. The influences of waveguide dimensions, curvature radiusand gap size on the coupling efficiency were discussed. An InP/AlGaInAs MQW ring laser with radius of 350 μm wasdesigned and realized. The experimental results show that the designed device, lasing at 1 563.2 nm with side modesuppression ratio higher than 20 dB, exhibited unidirectional bistability between the clockwise and counterclockwisemodes.
主 题 词：semiconductor laser multiple quantum well optical bistability AlGaInAs
学科分类：0401[教育学-教育学类] 04[教育学]
核心收录：
D O I：10.1007/s12209-014-2387-3
馆 藏 号：203110474...
