Upgrading design of the 3B1A beamline for x-ray nanometre lithography of microelectronic devices at BSRF

作     者：伊福廷 叶甜春 彭良强 陈大鹏 张菊芳 韩勇 

作者机构：InstituteofHighEnergyPhysicsChinaAcademyofScienceBeijing100039China InstituteofMicroElectronicsChinaAcademyofScienceBeijing100029China 

基　　金：Project partially supported by the Chinese 863 Plan (Contract 2002AA404150) 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2004年第13卷第5期

页      码：731-736页

摘      要：Beijing Synchrotron Radiation Facility is a partly dedicated synchrotron radiation source operated in either parasitic or dedicated mode. The 3B1A beamline, extracted from a bending magnet, was originally designed as a soft x-ray beamline for submicro x-ray lithography with critical lateral size just below 1μm in 1988 and no change has been made since it was built. But later the required resolution of x-ray lithography has changed from sub-micrometre to the nanometre in the critical lateral size. This beamline can longer more meet the requirement for x-ray nano lithography and has to be modified to fit the *** upgrade the design of the 3B1A beamline for x-ray nano lithography, a mirror is used to reflect and scan the x-ray beam for the nano lithography station, but the mirror s grazing angle is changed to 27.9mrad in the vertical direction and the convex curve needs to be modified to fit the change; the tiny change of mirror scanning angle is firstly considered to improve the uniformity of the x-ray spot on the wafer by controlling the convex curve.

主 题 词：synchrotron radiation x-ray x-ray lithography synchrotron radiation beamline 

学科分类：080901[080901] 0809[工学-计算机类] 08[工学] 080401[080401] 0804[工学-材料学] 082701[082701] 0827[工学-食品科学与工程类] 0803[工学-仪器类] 

核心收录：

D　O　I：10.1088/1009-1963/13/5/027

馆 藏 号：203112122...