Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET

作     者：贾云鹏 苏洪源 金锐 胡冬青 吴郁 

作者机构：Power semiconductor and power integrated circuit laboratory College of Electronic Information and Control EngineeringBeijing University of Technology New Electrical Materials and Microelectronics InstituteState Grid Smart Electrical Engineering 

基　　金：supported by the National Natural Science Foundation of China(No.61176071) the Doctoral Fund of Ministry of Education of China(No.20111103120016) the Science and Technology Program of State Grid Corporation of China(No.SGRI-WD-71-13-006) 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2016年第37卷第2期

页      码：90-93页

摘      要：The addition of a buffer layer can improve the device＇s secondary breakdown voltage, thus, improving the single event burnout （SEB） threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an op- timized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer ~ayer. So the linear buffer layer is more advantageous to improving the device＇s SEB performance.

主 题 词：single event burnout (SEB) quasi-static avalanche linear doping buffer layer heavy ion Au beam 

学科分类：080903[080903] 0809[工学-计算机类] 08[工学] 080501[080501] 0805[工学-能源动力学] 080502[080502] 

核心收录：

D　O　I：10.1088/1674-4926/37/2/024008

馆 藏 号：203113597...