Analysis of Drain Modulation for High Voltage GaN Power Amplifier Considering Parasitics

作     者：CHEN Xiaoqing CHENG Aiqiang ZHU Xinyi GU Liming TANG Shijun 陈晓青;成爱强;朱昕昳;顾黎明;唐世军

作者机构：Microwave Power Devices DepartmentNanjing Electronic Devices InstituteNanjing 210016P.R.China 

基　　金：supported by the Pri⁃mary Research&Development Plan of Jiangsu Province(Nos.BE2022070 BE2022070-2) 

出 版 物：《Transactions of Nanjing University of Aeronautics and Astronautics》 (南京航空航天大学学报（英文版）)

年 卷 期：2022年第39卷第5期

页      码：521-529页

摘      要：For high-voltage and high-power Gallium Nitride(GaN)power amplifiers,a drain modulation circuit with rapid rise and fall time is proposed in this *** decrease the rise and fall time,the high-side bootstrap drive circuit with an auxiliary discharge switch is *** effect of the parasitics is analyzed based on calculation and the parallel bonding is *** storage capacitance of power supply is calculated quantitatively to provide large pulse *** ensure safe operation of the power amplifier,the circuit topology with the dead-time control and sequential control is ***,a prototype is built to verify the drain modulation circuit *** experiments prove that the rise time and fall time of the output pulse signal are both less than 100 ns.

主 题 词：drain modulation GaN high voltage power amplifier parasitic inductance N-MOS driver 

学科分类：080902[080902] 0809[工学-计算机类] 08[工学] 

核心收录：

D　O　I：10.16356/j.1005-1120.2022.05.002

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