High linearity U-band power amplifier design:a novel intermodulation point analysis method

作     者：Jie CUI Peipei LI Weixing SHENG Jie CUI;Peipei LI;Weixing SHENG

作者机构：School of Electronic and Optical EngineeringNanjing University of Science and TechnologyNanjing 210094China 

基　　金：Project supported by the National Natural Science Foundation of China(No.62001232) 

出 版 物：《Frontiers of Information Technology & Electronic Engineering》 (信息与电子工程前沿（英文版）)

年 卷 期：2023年第24卷第1期

页      码：176-186页

摘      要：A power amplifier’s linearity determines the emission signal’s quality and the efficiency of the *** distortion can result in system bit error,out-of-band radiation,and interference with other channels,which severely influence communication system’s quality and *** from the third-order intermodulation point of the milimeter wave(mm-Wave)power amplifiers,the circuit’s nonlinearity is compensated *** analysis,design,and implementation of linear class AB mm-Wave power amplifiers based on GlobalFoundries 45 nm CMOS silicon-on-insulator(SOI)technology are *** single-ended and differential stacked power amplifiers have been implemented based on cascode cells and triple cascode cells operating in U-band *** to nonlinear analysis and on-wafer measurements,designs based on triple cascode cells outperform those based on cascode *** single-ended measurements,the differential power amplifier achieves a measured peak power-added efficiency(PAE)of 47.2%and a saturated output power(P_(sat))of 25.2 dBm at 44 *** amplifier achieves a P_(sat)higher than 23 dBm and a maximum PAE higher than 25%in the measured bandwidth from 44 GHz to 50 GHz.

主 题 词：CMOS silicon-on-insulator(SOI) Linearity analysis Milimeter wave(mm-Wave) Power amplifier 

学科分类：0710[理学-生物科学类] 0809[工学-计算机类] 080902[080902] 08[工学] 0811[工学-水利类] 

核心收录：

D　O　I：10.1631/FITEE.2200082

馆 藏 号：203117855...