Sigma-delta modulator modeling analysis and design

作     者：葛彬杰 王新安 张兴 冯晓星 汪清勤 

作者机构：Key Laboratory of Integrated Microsystem Science & Engineering ApplicationsShenzhen Graduate School of Peking University 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2010年第31卷第9期

页      码：79-83页

摘      要：This paper introduces a new method for SC sigma-delta modulator *** studies the integrator＇s different equivalent circuits in the integrating and sampling *** model uses the OP-AMP input pair＇s tail current（I_0） and overdrive voltage（v_（on）） as *** modulator＇s static and dynamic errors are analyzed.A group of optimized I0 and von for maximum SNR and power x area ratio can be obtained through this *** examples, a MASH21 modulator for digital audio and a second order modulator for RFID baseband are implemented and tested, and they can achieve 91 dB and 72 dB respectively,which verifies the modeling and design criteria.

主 题 词：sigma-delta modeling transient behavior optimization 

学科分类：080902[080902] 0809[工学-计算机类] 08[工学] 

核心收录：

D　O　I：10.1088/1674-4926/31/9/095003

馆 藏 号：203117959...