The off-state gate isolation technique to improve ASET tolerance in differential analog design
作者机构：College of Computer National University of Defense Technology
基 金：supported by the State Key Program of the National Natural Science Foundation of China(Grant No.60836004) the National Natural Science Foundation of China(Grant No.61376109)
出 版 物：《Science China(Technological Sciences)》 (中国科学（技术科学英文版）)
年 卷 期：2013年第56卷第10期
页 码：2599-2605页
摘 要：A novel off-state gate RHBD technique to mitigate the single-event transient(SET)in the differential data path of analog circuit is demonstrated in this *** results present that this off-state gate technique could exploit charge sharing in differential circuits and reduce differential mode voltage perturbation *** is indicated that this technique is more effective to mitigate SET than the differential charge cancellation(DCC)technique with less penalty.
主 题 词：charge sharing ASET off-state gate layout mitigation technique
学科分类：080902[080902] 0809[工学-计算机类] 08[工学]
核心收录：
D O I：10.1007/s11431-013-5343-x
馆 藏 号：203118103...
