Design and Realization of a Monolithic GaAs 3Bit Phase Digitizing DAC

作     者：张有涛 夏冠群 李拂晓 高建峰 杨乃彬 Zhang Youtao;Xia Guanqun;Li Fuxiao;GAO Jianfeng;Yang Naibin

作者机构：中国科学院上海微系统与信息技术研究所上海200050 南京电子器件研究所南京210016 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2005年第26卷第5期

页      码：873-876页

摘      要：Design,realization,and test of a monolithic GaAs 3bit phase digitizing DAC for 3bit digital radio-frequency memory are detailedly *** 0.5μm fully ion-implanted GaAs MESFET is used to fabricate the circuit in Nanjing Electronic Devices Institute’s (NEDI’s) 75mm standard process *** high-speed DAC is designed with on-wafer 50Ω I/O impedance *** results show that its work bandwidth is more than 1.5GHz,and phase accuracy is better than 4%.Its code conversion rate can be higher than 12Gbps.

主 题 词：phase digitizing DAC high-speed GaAs DRFM 

学科分类：080902[080902] 0809[工学-计算机类] 08[工学] 

核心收录：

D　O　I：10.3969/j.issn.1674-4926.2005.05.005

馆 藏 号：203120838...