混合维度WS_(2)/WSe_(2)/Si单极势垒异质结构用于高性能光电探测

作     者：黄梓豪 杨孟孟 邱智聪 罗中通 陈瑜 杜纯 姚健东 董华峰 郑照强 李京波 Zihao Huang;Mengmeng Yang;Zhicong Qiu;Zhongtong Luo;Yu Chen;Chun Du;Jiandong Yao;Huafeng Dong;Zhaoqiang Zheng;Jingbo Li

作者机构：Guangdong Provincial Key Laboratory of Information Photonics TechnologySchool of Materials and EnergyGuangdong University of TechnologyGuangzhou 510006China Analysis and Test CenterGuangdong University of TechnologyGuangzhou 510006China Guangdong Provincial Key Laboratory of Optical Fiber Sensing and CommunicationsInstitute of Photonics TechnologyJinan UniversityGuangzhou 511443China State Key Laboratory of Optoelectronic Materials and TechnologiesNanotechnology Research CenterSchool of Materials Science&EngineeringSun Yat-sen UniversityGuangzhou 510275China School of Physics and Optoelectronic EngineeringGuangdong University of TechnologyGuangzhou 510006China Institute of SemiconductorsSouth China Normal UniversityGuangzhou 510631China 

基　　金：supported by the National Natural Science Foundation of China(62175040 and 61805044) the Science and Technology Program of Guangzhou(202201010242) Guangdong Provincial Key Laboratory of Information Photonics Technology(2020B121201011) the Pearl River Talent Recruitment Program(2019ZT08X639) 

出 版 物：《Science China Materials》 (中国科学（材料科学（英文版）)

年 卷 期：2023年第66卷第6期

页      码：2354-2363页

摘      要：单极势垒异质结构可以选择性地降低暗电流,但不影响光电流,是一种构建高性能光电探测器的有效策略.特别地,具有可调谐能带结构和自钝化表面的二维(2D)材料不仅能满足能带匹配要求,而且避免了界面缺陷和晶格失配,有助于设计单极势垒异质结构.这里,我们展示了一种混合维度WS_(2)/WSe_(2)/p-Si单极势垒异质结光电探测器.其中,2D WS_(2)充当光子吸收体,原子级厚度的WSe_(2)充当单极势垒,3D p-Si充当光生载流子收集器.插入的WSe_(2)不仅减轻了有害的衬底效应,而且形成了高导带势垒,可以过滤掉若干暗电流分量,同时不影响光电流.在隧穿效应和载流子倍增效应的驱动下,该WS_(2)/WSe_(2)/p-Si器件表现出高于10~5的高开/关比、2.39×10^(12)Jones的高探测度和8.47/7.98毫秒的快速上升/衰减时间.这些优点显著优于传统的WS_(2)/p-Si器件,为设计高性能的光电器件开辟了一个新方案.

主 题 词：光电探测器 异质结构 光电器件 隧穿效应 暗电流 原子级 光子吸收 衰减时间 

学科分类：0809[工学-计算机类] 08[工学] 080501[080501] 0805[工学-能源动力学] 0703[理学-化学类] 0803[工学-仪器类] 0702[理学-物理学类] 

核心收录：

D　O　I：10.1007/s40843-022-2393-4

馆 藏 号：203121606...