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Monitoring and engineering interface coupling between monolayer WS_(2)and substrate through controllably introducing interfacial strain

Monitoring and engineering interface coupling between monolayer WS_(2)and substrate through controllably introducing interfacial strain

作     者:Xiaofei Yue Jiajun Chen Jinkun Han Yabing Shan Shuwen Shen Wenxuan Wu Bingjie Liu Lijia Li Yu Chen Rongjun Zhang Laigui Hu Ran Liu Zhijun Qiu Chunxiao Cong 岳晓飞;陈嘉俊;韩金坤;单亚兵;申淑雯;吴雯萱;刘炳杰;李黎嘉;陈俞;张荣君;胡来归;刘冉;仇志军;丛春晓

作者机构:School of Information Science and TechnologyFudan UniversityShanghai200433China Commonwealth Scientific and Industrial Research Organization(CSIRO)ClaytonVictoria3168Australia Yiwu Research Institute of Fudan UniversityYiwu322000China 

基  金:supported by the National Key R&D Program of China(2018YFA0703700) the National Natural Science Foundation of China(62374037) Shanghai Municipal Natural Science Foundation(20ZR1403200) the National Young 1000 Talent Plan of China 

出 版 物:《Science China Materials》 (中国科学(材料科学)(英文版))

年 卷 期:2024年第67卷第9期

页      码:3012-3020页

摘      要:The interface properties in two-dimensional(2D)layered materials and their van der Waals(vdW)homo-/heterostructures are of importance in both uncovering novel physical phenomena and optimizing device *** considerable research interest and enthusiasm direct toward the interlayer coupling in 2D homo-and heterostructures,there is limited research on the coupling at the 2D layered material-substrate *** limitation is due to the challenges in achieving direct ***,the coupling mechanisms at the 2D layered material-substrate interface is ambiguous,which needs greater *** this study,we have systematically investigated the interface coupling between monolayer WS_(2)and its supported substrates using high-temperature and high-vacuum in-situ Raman spectroscopy through monitoring the low-frequency Raman mode of monolayer WS_(2).Our findings reveal that both interfacial spacing and strain can significantly affect the coupling strength between the monolayer WS_(2)and the supported *** notably,we found that the strategic introduction of appropriate interfacial strain can effectively enhance the interface ***,we have succeeded in achieving effective regulation of the sample-substrate coupling via a convenient way of controlling the cooling process during *** findings contribute to a deeper understanding of the coupling correlation between 2D layered materials and substrates,which is of great significance for the design and optimization of high-performance devices based on 2D layered semiconductors.

主 题 词:two-dimensional layered material substrate interface coupling low-frequency Raman mode interfacial spacing interfacial strain 

学科分类:08[工学] 0805[工学-能源动力学] 080502[080502] 

核心收录:

D O I:10.1007/s40843-024-2948-9

馆 藏 号:203131293...

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