A 2.1-6 GHz SiGe BiCMOS low-noise amplifier design for a multi-mode wideband receiver

作     者：陈磊 阮颖 马和良 赖宗声 

作者机构：Institute of Microelectronics Circuit & SystemEast China Normal University 

基　　金：supported by the Applied Material Foundation of the Shanghai,China(Nos.08706200802,08700741300,09700713800) the Shanghai Leading Academic Discipline Project of China(No.B411) 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2010年第31卷第5期

页      码：69-72页

摘      要：A wideband low-noise amplifier（LNA） with ESD protection for a multi-mode receiver is *** LNA is fabricated in a 0.18-μm SiGe BiCMOS process,covering the 2.1 to 6 GHz frequency *** optimized noise modeling and circuit design,the measured results show that the LNA has a 12 dB gain over the entire bandwidth, the input third intercept point（IIP3） is -8 dBm at 6 GHz,and the noise figure is from 2.3 to 3.8 dB in the operating *** overall power consumption is 8 mW at 2.5 V voltage supply.

主 题 词：SiGe BiCMOS low- noise-amplifier wideband electrostatic discharge 

学科分类：080902[080902] 0809[工学-计算机类] 08[工学] 

核心收录：

D　O　I：10.1088/1674-4926/31/5/055001

馆 藏 号：203134838...