Optimized design of 4H-SiC floating junction power Schottky barrier diodes

作     者：蒲红斌 曹琳 陈治明 任杰 

作者机构：Xi'an University of Technology 

基　　金：supported by the Open Fund of Key Laboratory of Wide Bandgap Semiconductors Material and Devices  Ministry of Education China 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2009年第30卷第4期

页      码：22-24页

摘      要：SiC floating junction Schottky barrier diodes were simulated with software MEDICI 4.0 and their device structures were optimized based on forward and reverse electrical characteristics. Compared with the conventional power Schottky barrier diode, the device structure is featured by a highly doped drift region and embedded floating junction region, which can ensure high breakdown voltage while keeping lower specific on-state resistance, solved the contradiction between forward voltage drop and breakdown voltage. The simulation results show that with opti- mized structure parameter, the breakdown voltage can reach 4 kV and the specific on-resistance is 8.3 mΩ·cm2.

主 题 词：SiC floating junction Schottky barrier diode 

学科分类：080903[080903] 0809[工学-计算机类] 08[工学] 080501[080501] 0805[工学-能源动力学] 080502[080502] 

核心收录：

D　O　I：10.1088/1674-4926/30/4/044001

馆 藏 号：203135499...