Design of InAlAs/InGaAs PHEMTs and small-signal modeling from 0.5 to 110 GHz

作     者：王志明 吕昕 罗晓斌 崔玉兴 孙希国 默江辉 付兴昌 李亮 何大伟 

作者机构：Beijing Key Laboratory of Millimeter Wave and Terahertz TechnologyBeijing Institute of Technology National Key Laboratory of Application Specific Integrated Circuit (ASIC)Hebei Semiconductor Research Institute 

基　　金：Project supported by the National Natural Science Foundation of China(No.61275107) 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2015年第36卷第2期

页      码：72-76页

摘      要：90-nm T-shaped gate InP-based In_（0.52）Al_（0.48）As/In_（0.6）Ga_（0.4）As pseudomorphic high electron mobility transistors were designed and fabricated with a gate-width of 2×30 μm,a source-drain space of 2.5 μm,and a source-gate space of 0.75 μ***,RF and small-signal model characterizations were *** maximum saturation current density was measured to be 755 mA/mm biased at V_（gs）=0.6 V and V_（ds）=1.5 *** maximum extrinsic transconductance was measured to be 1006 mS/mm biased at V_（ds）=—0.1V and V_（ds）=1.5 *** extrapolated current gain cutoff frequency and maximum oscillation frequency based on S-parameters measured from 0.5 to 110 GHz were 180 and 264 GHz,*** inflection point（the stability factor k=1）where the slope from-10 dB/decade（MSG） to-20 dB/decade（MAG） was measured to be 83 *** smallsignal model of this device was also established,and the S-parameters of the model are consistent with those measured from 0.5-110 GHz.

主 题 词：InP PHEMTs InAlAs/InGaAs MMICs small-signal modeling 

学科分类：080903[080903] 0808[工学-自动化类] 0809[工学-计算机类] 08[工学] 080501[080501] 0805[工学-能源动力学] 080502[080502] 0703[理学-化学类] 0702[理学-物理学类] 

核心收录：

D　O　I：10.1088/1674-4926/36/2/024005

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