3-D Simulation of FINFET

作     者：刘恩峰 刘晓彦 韩汝琦 

作者机构：北京大学微电子所北京100871 

基　　金：国家重大基础研究规划资助项目 (No.G2 0 0 0 0 3 65)~~ 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2002年第23卷第9期

页      码：909-913页

摘      要：An SOI MOSFET with FINFET structure is simulated using a 3 D simulator. I V characteristics and sub threshold characteristics,as well as the short channel effect(SCE) are carefully *** can be well controlled by reducing fin *** performance can be achieved with thin height,so fin height is considered as a key parameter in device *** results show that FINFETs present performance superior to conventional single gate devices.

主 题 词：FINFET 3 D simulation short channel effect 

学科分类：080903[080903] 0809[工学-计算机类] 08[工学] 080501[080501] 0805[工学-能源动力学] 080502[080502] 

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