Fabrication of Sub-20nm Metal Nanogaps from Nanoconnections by the Extended Proximity Effect

作     者：孙艳 陈鑫 戴宁 

作者机构：中国科学院上海技术物理研究所红外物理国家实验室上海200083 

基　　金：the National Natural Science Foundation of China(No.20704042) the Shanghai Pujiang Talent Plan(No.07PJ14095) the CAS Knowledge Innovation Program the Committee of Science and Technology of Shanghai(Nos.06XD14020,07JC14058,0752nm016)~~ 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2008年第29卷第9期

页      码：1666-1669页

摘      要：We describe the fabrication of metal nanogaps of sub-20nm in feature size using the proximity effect in electron beam lithography （EBL）. The proximity effect is extended to develop a flexible and practical method for preparing metal （e. g. Au or Ag） nanogaps and arrays in combination with a transfer process （e. g., deposition/lift-off）. Different from the direct gap-writing process,the nanogap precursor structures （nanoconnections） were designed by GDSII software and then written by electron beam. Following a deposition and lift-off process, the metal nanogaps were obtained and the nanogap size can be lowered to -10nm by controlling the exposure dose in EBL.

主 题 词：metal nanogap nanofabrication proximity effect electron beam lithography 

学科分类：080903[080903] 0809[工学-计算机类] 08[工学] 080501[080501] 0805[工学-能源动力学] 080502[080502] 

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