Rotary traveling-wave oscillator design using 0.18μm CMOS

作     者：胡新毅 戴雅跃 张华锋 周金芳 陈抗生 

作者机构：Department of Information Science and Electronic Engineering Zhejiang University 

基　　金：Semiconductor Manufacturing International(Shanghai) Corp for chip tape out and measurement support 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2010年第31卷第6期

页      码：124-127页

摘      要：A rotary traveling-wave oscillator（RTWO） targeted at 5.8 GHz band operation is designed and fabricated using standard 0.18μm CMOS *** simulation and measurement results are *** chip size including pads is 1.5×1.5 mm^*** measured output power at a frequency of 5.285 GHz is 6.68 dBm,with a phase noise of-102 dBc/Hz at 1 MHz offset from the carrier.

主 题 词：rotary traveling-wave oscillators multiphase oscillators CMOS 

学科分类：080903[080903] 080904[080904] 0809[工学-计算机类] 08[工学] 

核心收录：

D　O　I：10.1088/1674-4926/31/6/065009

馆 藏 号：203154814...