Design of a 0.5 V CMOS cascode low noise amplifier for multi-gigahertz applications

作     者：Liu Baohong Zhou Jianjun Mao Junfa 刘宝宏;周健军;毛军发

作者机构：Center for Microwave and RF Technologies Shanghai Jiao Tong UniversityShanghai 200240China Center for Analog/RF Integrated Circuits Shanghai Jiao Tong UniversityShanghai 200240China 

基　　金：Project Supported by the National Science Fund for Creative Research Groups of China(No.60821062) the National Basic Research Program of China(No.2009CB320202) 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2012年第33卷第1期

页      码：114-119页

摘      要：This paper presents the design of 0.5 V multi-gigahertz cascode CMOS LNA for low power wireless communication. By splitting the direct current through conventional cascode topology, the constraint of stacking- MOS structure for supply voltage has been removed and based on forward-body-bias technology, the circuit can operate at 0.5 V supply voltage. Design details and RF characteristics have been investigated in this paper. To verify the investigation, a 0.5 V 5.4 GHz LNA has been fabricated through 0.18 μm CMOS technology and measured. Measured results show that it obtains 9.1 dB gain, 3 dB NF with 0.5 V voltage and 2.5 mW power dissipation. The measured IIP3 is -3.5 dBm. Compared with previously published cascode LNA, it achieves the lowest supply voltage and lowest power dissipation with competitive RF performances.

主 题 词：CMOS 0.5 V cascode low noise amplifier direct current split forward-body-bias technology multi- gigahertz applications 

学科分类：080902[080902] 0809[工学-计算机类] 08[工学] 

核心收录：

D　O　I：10.1088/1674-4926/33/1/015006

馆 藏 号：203155332...