Enhancing the high-temperature stability of OFETs by inducing D-A stacking in P(NDI2OD-T2) films

作     者：Xuetao Xiao Wenhao Li Qing Zhou Zeng Wu Xiaochan Zuo Rong Ma Yifei Xu Sichun Wang Yan Zhao 肖雪涛;李文豪;周青;吴锃;左小婵;马荣;徐一飞;王思纯;赵岩

作者机构：Laboratory of Molecular Materials and DevicesDepartment of Materials ScienceFudan UniversityShanghai 200433China State Key Laboratory of Molecular Engineering of Polymers and Department of Macromolecular ScienceFudan UniversityShanghai 200433China 

基　　金：financially supported by the Nation Key R&D Program China (2022YFB3603804) Natural Science Foundation of Shanghai (22ZR1407800) Postdoctoral Science Foundation of China (2021M700800) 

出 版 物：《Science China Materials》 (中国科学(材料科学)(英文版))

年 卷 期：2025年第68卷第1期

页      码：117-124页

摘      要：High-temperature stability of organic field-effect transistors(OFETs)is critical to ensure its long-term reliable operation under various environmental *** molecular packing of donor-acceptor(D-A)conjugated polymers is closely related to the electrical performance stability in ***,we choose poly[[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)]as a modal system to reveal the relationship between the molecular stacking and electrical stability in high-temperature *** results demonstrate that the films with D-A moieties in alternate stacking have better electrical thermal stability compared to normal donor-donor(D-D)*** D-A stacking configuration alternates donor and acceptor units along the out-of-plane direction,while the D-D stacking involves D-D and A-A stacking *** structural transition from D-D to D-A is captured at a treated temperature range of 225±250°*** to the tighter packing arrangement along theπ-πand lamellar directions,the electron mobility of the D-A stacked films reaches up to 0.23 cm^(2)/V·s,a 50%increase as compared to the D-D stacking ***,the D-A stacked films indicate superior electrical performance stability with mobility retaining 100%at 250°C during high-temperature cycling *** result highlights that the manipulation of conjugated polymer closely stacked structures can significantly enhance the thermal stability and durability of semiconductor devices.

主 题 词：high-temperature stability D-A stacking P(NDI2OD-T2) electrical properties OFETs 

学科分类：080903[080903] 0809[工学-计算机类] 08[工学] 080501[080501] 0805[工学-能源动力学] 080502[080502] 

核心收录：

D　O　I：10.1007/s40843-024-3147-8

馆 藏 号：203155486...