Lithium niobate electro-optical modulator based on ion-cut wafer scale heterogeneous bonding on patterned SOI wafers

作     者：ZHUOYUN LI YANG CHEN SHUXIAO WANG FAN XU QIANG XU JIANMIN ZHANG QIANNAN ZHU WENCHENG YUE XIN OU YAN CAI MINGBIN YU ZHUOYUN LI;YANG CHEN;SHUXIAO WANG;FAN XU;QIANG XU;JIANMIN ZHANG;QIANNAN ZHU;WENCHENG YUE;XIN OU;YAN CAI;MINGBIN YU

作者机构：State Key Laboratory of Materials for Integrated CircuitsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China University of Chinese Academy of SciencesBeijing 100049China School of MicroelectronicsShanghai UniversityShanghai 201800China Shanghai IndustrialμTechnology Research InstituteShanghai 201800China Shanghai Mingkun Semiconductor Co.Ltd.Shanghai 201800China 

基　　金：China State Key Laboratory of Materials for Integrated Circuits(NKLJC-Z2023-A04) National Natural Science Foundation of China(62204250,61935003) National Key Research and Development Program of China(2021YFB2800303) 

出 版 物：《Photonics Research》 (光子学研究(英文版))

年 卷 期：2025年第13卷第1期

页      码：106-112页

摘      要：This paper presents the design,fabrication,and characterization of a high-performance heterogeneous silicon on insulator(SOI)/thin film lithium niobate(TFLN)electro-optical modulator based on wafer-scale direct bonding followed by ion-cut *** SOI wafer has been processed by an 8 inch standard fabrication line and cut into 6 inch for direct bonding with *** hybrid SOI/LN electro-optical modulator operated at the wavelength of 1.55μmis composed of couplers on the Si layer and aMach-Zehnder interferometer(MZI)structure on *** fabricated device exhibits a stable value of the product of half-wave voltage and length(V_(π)L)of around 2.9 V·*** shows a good low-frequency electro-optic response flatness and supports 96 Gbit/s data transmission for the NRZ format and 192 Gbit/s data transmission for the PAM-4 format.

主 题 词：modulator SOI interferometer 

学科分类：080902[080902] 0809[工学-计算机类] 08[工学] 

核心收录：

D　O　I：10.1364/PRJ.534954

馆 藏 号：203156284...