Heterogeneously integrated silicon-conductive oxide MOSCAP microring modulator array

作     者：WEI-CHE HSU SAEED ABDOLHOSSEINI HAISHENG RONG RANJEET KUMAR BERND ZECHMANN ALAN X.WANG WEI-CHE Hsu;SAEED ABDOLHOSSEINI;HAISHENG RONG;RANJEET KUMAR;BERND ZECHMANN;ALAN X.WANG

作者机构：Department of Electrical and Computer EngineeringBaylor UniversityWacoTexas 76798USA School of Electrical Engineering and Computer ScienceOregon State UniversityCorvallisOregon 97331USA Intel CorporationSanta ClaraCalifornia 95054USA Center of Microscopy and ImagingBaylor UniversityWacoTexas 76798USA 

基　　金：Intel Corporation(76084461) National Science Foundation(2240352) Defense Advanced Research Projects Agency(N660012424000) Army Research Office(W911NF2410165) Air Force Office of Scientific Research(FA9550-20-1-0151) National Aeronautics and Space Administration(80NSSC23K0195) 

出 版 物：《Photonics Research》 (光子学研究(英文版))

年 卷 期：2025年第13卷第1期

页      码：187-193页

摘      要：In pursuit of energy-efficient optical interconnect,the silicon microring modulator(Si-MRM)has emerged as a pivotal device offering an ultra-compact footprint and capability of on-chip wavelength division multiplexing(WDM).This paper presents a 1×4 metal-oxide-semiconductor capacitor(MOSCAP)Si-MRM array gated by high-mobility titanium-doped indium oxide(ITiO),which was fabricated by combining Intel’s high-volume manufacturing process and the transparent conductive oxide(TCO)patterning with the university *** 1×4 Si-MRM array exhibits a high electro-optic(E-O)efficiency with V_(π)·L of 0.12 V·cm and achieves a modulation rate of
(3×25+1×15)Gb/s with a measured bandwidth of 14 ***,it can perform on-chip WDM modulation at four equally spaced wavelengths without using thermal *** process compatibility between silicon photonics and TCO materials is verified by such an industry-university co-fabrication approach for the MOSCAP Si-MRM array and demonstrated enhanced performance from heterogeneous integration.

主 题 词：modulator conductive oxide 

学科分类：080902[080902] 0809[工学-计算机类] 08[工学] 

核心收录：

D　O　I：10.1364/PRJ.528975

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