Correlation between the whole small recess offset and electrical performance of InP-based HEMTs

作     者：GONG Hang ZHOU Fu-Gui FENG Rui-Ze FENG Zhi-Yu LIU Tong SHI Jing-Yuan SU Yong-Bo JIN Zhi 龚航;周福贵;封瑞泽;冯识谕;刘桐;史敬元;苏永波;金智

作者机构：High-Frequency High-Voltage Device and Integrated Circuits CenterInstitute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences(UCAS)Beijing 100049China 

基　　金：Supported by the Terahertz Multi User RF Transceiver System Development Project(Z211100004421012) 

出 版 物：《红外与毫米波学报》 (Journal of Infrared and Millimeter Waves)

年 卷 期：2025年第44卷第1期

页      码：40-45页

摘      要：In this work,we investigate the impact of the whole small recess offset on DC and RF characteristics of InP high electron mobility transistors(HEMTs).L_(g)=80 nm HEMTs are fabricated with a double-recessed gate *** focus on their DC and RF responses,including the maximum transconductance(g_(m_max)),ON-resistance(R_(ON)),current-gain cutoff frequency(f_(T)),and maximum oscillation frequency(f_(max)).The devices have almost same *** g_(m_max) improves as the whole small recess moves toward the ***,a small gate to source capacitance(C_(gs))and a small drain output conductance(g_(ds))lead to the largest f_(T),although the whole small gate recess moves toward the drain leads to the smaller g_(m_max).According to the small-signal modeling,the device with the whole small recess toward drain exhibits an excellent RF characteristics,such as f_(T)=372 GHz and f_(max)=394 *** result is achieved by paying attention to adjust resistive and capacitive parasitics,which play a key role in high-frequency response.

主 题 词：InP high-electron-mobility transistor(InP HEMT) InGaAs/InAlAs DC/RF characteristic smallsignal modeling double-recessed gate process 

学科分类：080903[080903] 0809[工学-计算机类] 08[工学] 080501[080501] 0805[工学-能源动力学] 080502[080502] 

核心收录：

D　O　I：10.11972/j.issn.1001-9014.2025.01.006

馆 藏 号：203156572...