A HgTe/ZnO quantum dots vertically stacked heterojunction low dark current photodetector

作     者：HUANG Xin-Ning JIANG Teng-Teng DI Yun-Xiang XIE Mao-Bin GUO Tian-Le LIU Jing-Jing WU Bin-Min SHI Jing-Mei QIN Qiang DENG Gong-Rong CHEN Yan LIN Tie SHENHong MENG Xiang-Jian WANG Xu-Dong CHU Jun-Hao GE Jun WANG Jian-Lu 黄新宁;姜腾腾;狄云翔;谢茂彬;郭天乐;刘晶晶;吴斌民;施静梅;秦强;邓功荣;陈艳;林铁;沈宏;孟祥建;王旭东;褚君浩;葛军;王建禄

作者机构：State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China University of Chinese Academy of SciencesBeijing 100049China Frontier Institute of Chip and SystemInstitute of OptoelectronicsShanghai Frontier Base of Intelligent Optoelectronics and PerceptionFudan UniversityShanghai 200438China Kunming Institute of PhysicsKunming 650223China 

基　　金：Supported by National Key Research and Development Program in the 14th five year plan(2021YFA1200700) Strategic Priority Re⁃search Program of the Chinese Academy of Sciences(XDB0580000) Natural Science Foundation of China(62025405,62104235,62105348) 

出 版 物：《红外与毫米波学报》 (Journal of Infrared and Millimeter Waves)

年 卷 期：2025年第44卷第1期

页      码：33-39页

摘      要：Colloidal quantum dots(CQDs)are affected by the quantum confinement effect,which makes their bandgap *** characteristic allows these materials to cover a broader infrared spectrum,providing a costeffective alternative to traditional infrared detector ***,thanks to the solution processing properties of quantum dots and their ability to integrate with silicon-based readout circuits on a single chip,infrared detectors based on HgTe CQDs have shown great application ***,facing the challenges of vertically stacked photovoltaic devices,such as barrier layer matching and film non-uniformity,most devices integrated with readout circuits still use a planar structure,which limits the efficiency of light absorption and the effective separation and collection of photo-generated ***,by synthesizing high-quality HgTe CQDs and precisely controlling the interface quality,we have successfully fabricated a photovoltaic detector based on HgTe and ZnO *** a working temperature of 80 K,this detector achieved a low dark current of 5.23×10^(-9)A cm^(-2),a high rectification ratio,and satisfactory detection *** work paves a new way for the vertical integration of HgTe CQDs on silicon-based readout circuits,demonstrating their great potential in the field of high-performance infrared detection.

主 题 词：colloidal quantum dots photodetector barrier layer heterojunction 

学科分类：080903[080903] 0809[工学-计算机类] 07[理学] 070205[070205] 08[工学] 080501[080501] 0805[工学-能源动力学] 0702[理学-物理学类] 

核心收录：

D　O　I：10.11972/j.issn.1001-9014.2025.01.005

馆 藏 号：203156591...