Design of Waveguide Integrated Ge-Quantum-Well Electro-Absorption Modulators

作     者：ZHAO Hong-Wei HU Wei-Xuan XUE Chun-Lai CHENG Bu-Wen WANG Qi-Ming 

作者机构：State Key Laboratory of Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 

基　　金：Supported by the National Basic Research Program of China under Grant No 2007CB613404  the National Natural Science Foundation of China under Grant Nos 61036003 and 60906035  and the Knowledge Innovation Project of Chinese Academy of Sciences under Grant No ISCAS2009T01 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2011年第28卷第1期

页      码：102-105页

摘      要：We present two designs for a waveguide Oe-quantum-well electro-absorption modulator. In our designs, the strip SOI waveguides are butt-coupled and evanescent-coupled to the modulator, respectively. The proposed Gequantum-weB electro-absorption modulator is based on quantum-confined Stark effect （QCSE）, having a 3-dB bandwidth above 50GHz, as well as a low switching power （around 60fJ/bit at 1435nm）. In the butt-coupled design, the optimized extinction ratio is up to 11.4 dB, while the insertion loss is only 6. 74 dB. For the second one, which utilizes evanescent coupling, the extinction ratio and insertion loss are 9.18 dB and 6. 72 dB, respectively.

主 题 词：Optics quantum optics and lasers 

学科分类：080902[080902] 0809[工学-计算机类] 08[工学] 0803[工学-仪器类] 

核心收录：

D　O　I：10.1088/0256-307X/28/1/014204

馆 藏 号：203159451...