Investigations of Key Technologies for 100V HVCMOS Process

作     者：宋李梅 李桦 杜寰 夏洋 韩郑生 海潮和 Song Limei;Li Hua;Du Huan;Xia Yang;Han Zhengsheng;Hai Chaohe

作者机构：中国科学院微电子研究所北京100029 

基　　金：国家重点基础研究发展计划资助项目(批准号:2003CB314705)~~ 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2006年第27卷第11期

页      码：1900-1905页

摘      要：A novel dual gate oxide （DGO） process is proposed to improve the performance of high voltage CMOS （HVCMOS） devices and the compatibility between thick gate oxide devices and thin gate oxide devices. An extra sidewall is added in this DGO process to round off the step formed after etching the thick gate oxide and poly-silicon. The breakdown voltages of high voltage nMOS （HVnMOS） and high voltage pMOS （HVpMOS） are 168 and - 158V, respectively. Excellent performances are realized for both HVnMOS and HVpMOS devices. Experimental results demonstrate that the HVCMOS devices work safely at an operation voltage of 100V.

主 题 词：HVCMOS DGO compatibility 

学科分类：080903[080903] 0809[工学-计算机类] 08[工学] 080501[080501] 0805[工学-能源动力学] 080502[080502] 

核心收录：

D　O　I：10.3969/j.issn.1674-4926.2006.11.003

馆 藏 号：203162866...