A novel layout for single event upset mitigation in advanced CMOS SRAM cells
作者机构：School of Computer ScienceNational University of Defense Technology
基 金：supported by the National Natural Science Foundation of China (Grant Nos. 60836004 and 60906014) Hunan Provincial Innovation Foundation For Postgraduate (Grant No. CX2011B026)
出 版 物：《Science China(Technological Sciences)》 (中国科学（技术科学英文版）)
年 卷 期：2013年第56卷第1期
页 码：143-147页
摘 要：A novel layout has been proposed to reduce the single event upset(SEU) vulnerability of SRAM *** 3-D technology computer-aided design(TCAD) simulation analyses show that the proposed layout can recover the upset-state much easier than conventional layout for larger space of PMOS *** the angle incidence,the proposed layout is immune from ion hit in two plans,and is more robust against SEU in other two plans than the conventional *** ability of anti-SEU is enhanced by at least 33% while the area cost reduced by 47%.Consequently,the layout strategy proposed can gain both reliability and area cost benefit simultaneously.
主 题 词：single event upset layout technique SRAM radiation hardening by design
学科分类：080903[080903] 0809[工学-计算机类] 08[工学]
核心收录：
D O I：10.1007/s11431-012-5049-5
馆 藏 号：203165429...
