A promising two-dimensional channel material:monolayer antimonide phosphorus

作     者：蔡波 谢美秋 张胜利 黄呈熙 阚二军 陈显平 顾宇 曾海波 

作者机构：Institute of Optoelectronics&NanomaterialsJiangsu Key Laboratory of Advanced Micro&Nano Materials and TechnologyCollege of Material Science and EngineeringNanjing University of Science and TechnologyNanjing 210094China Department of Applied PhysicsNanjing University of Science and TechnologyNanjing 210094China College of Optoelectronic EngineeringChongqing UniversityChongqing 400044China 

基　　金：supported by the National Key Basic Research Program of China(2014CB931702) the National Natural Science Foundation of China(NSFC,51572128) the NSFC and the Research Grants Council(RGC)of Hong Kong Joint Research Sctheme(5151101197) the Priority Academic Program Development of Jiangsu Higther Education Institutions 

出 版 物：《Science China Materials》 (中国科学（材料科学（英文版）)

年 卷 期：2016年第59卷第8期

页      码：648-656页

摘      要：As the base of modern electronic industry,field-effect transistor(FET) requires the channel material to have both moderate bandgap and high mobility. The recent progresses indicate that few-layer black phosphorus has suitable bandgap and higher mobility than two-dimensional(2D) MoS_2, but the experimentally achieved maximal mobility(1000 cm^2 V^(-1) s^(-1)) is still obviously lower than those of classical semiconductors(1,400 and 5,400 cm^2 V^(-1) s^(-1) for Si and InP). Here, for the first time, we report on monolayer antimonide phosphorus(SbP) as a promising 2D channel material with suitable direct bandgap, which can satisfy the on/off ratio, and with mobility as high as 10~4 cm^2 V^(-1) s^(-1)based on density functional theory calculation. In particular,α-Sb_(1-x)P_x monolayers possess 0.3–1.6 eV bandgaps when0.1 ≤ x ≤ 1, which are greater than the minimum bandgap(0.4 eV) required for large on/off ratio of FET. Surprisingly,the carrier mobilities of α-Sb_(1-x)P_x monolayers exhibit very high upper limit approaching 2×10~4 cm^2 V^(-1) s^(-1) when 0 ≤x ≤ 0.25 due to the ultra-small effective mass of holes and electrons. This work reveals that 2D SbP with both suitable bandgap and high mobility could be a promising candidate as eco-friendly high-performance FET channel materials avoiding short-channel effect in the post-silicon era, especially when considering the recent experimental success in realizing arsenide phosphorus(AsP) with similar structure.

主 题 词：phosphorene mobility bandgap density functional calculations alloying strategy 

学科分类：080903[080903] 0809[工学-计算机类] 08[工学] 080501[080501] 0805[工学-能源动力学] 080502[080502] 

核心收录：

D　O　I：10.1007/s40843-016-5096-6

馆 藏 号：203187583...