Highly efficient Z-scheme WO_(3-x) quantum dots/TiO_2 for photocatalytic hydrogen generation

作     者：潘伦 张靖雯 贾旭 马煜航 张香文 王莅 邹吉军 Lun Pan;Jingwen Zhang;Xu Jia;Yu-Hang Ma;Xiangwen Zhang;Li Wang;Ji-Jun Zou

作者机构：天津大学化工学院绿色合成与转化教育部重点实验室天津300072 天津化学化工协同创新中心天津300072 

基　　金：supported by the National Natural Science Foundation of China (21506156, 21676193) the Tianjin Municipal Natural Science Foundation (15JCZDJC37300, 16JCQNJC05200) 

出 版 物：《Chinese Journal of Catalysis》 (催化学报（英文）)

年 卷 期：2017年第38卷第2期

页      码：253-259页

摘      要：Z-scheme semiconductors are a promising class of photocatalysts for hydrogen *** this work,Z-scheme semiconductors composed of WO3-x quantum dots supported on TiO2（WO3-xQDS/TiO2） were fabricated by solvothermal and hydrogen-reduction *** by transmission electron microscopy and X-ray diffraction indicated that the amount and size of the WO3-x QDs could be tuned by modulating the addition of the W *** from X-ray photoelectron spectroscopy and photoluminescence spectroscopy suggested that the hydrogen reduction of the composite induced the formation of oxygen vacancy（W^5＋/Vo） defects in *** defects led to ohmic contact between WO3-x and TiO2,which altered the charge-transfer pathway from type Ⅱ heterojunction to Z-scheme,and maintained the highly reductive and oxidative ability of TiO2 and WO3-x,***,the Z-scheme sample showed 1.3-fold higher photoactivity than pure TiO2 in hydrogen *** results suggest that the formation of W^5＋/Vo defects at the interface is highly beneficial for the fabrication of Z-scheme photocatalysts.

主 题 词：WO3–x Titanium oxide Hydrogen generation Quantum dots W^5+/oxygen vacancy defect 

学科分类：081705[081705] 08[工学] 0817[工学-轻工类] 

核心收录：

D　O　I：10.1016/S1872-2067(16)62576-7

馆 藏 号：203216159...