Design of small-area multi-bit antifuse-type 1 kbit OTP memory

作     者：李龙镇 LEE J H KIM T H JIN K H PARK M H HA P B KIM Y H 

作者机构：Department of Electronic EngineeringChangwon National University Department of Computer Science and TechnologyYanbian University 

基　　金：Project supported by the 2nd Stage of Brain Korea Project supported by the Korea Research Foundation 

出 版 物：《Journal of Central South University》 (中南大学学报（英文版）)

年 卷 期：2009年第16卷第3期

页      码：467-473页

摘      要：A multi-bit antifuse-type one-time programmable （OTP） memory is designed, which has a smaller area and a shorter programming time compared with the conventional single-bit antifuse-type OTP memory. While the conventional antifuse-type OTP memory can store a bit per cell, a proposed OTP memory can store two consecutive bits per cell through a data compression technique. The 1 kbit OTP memory designed with Magnachip 0.18 μm CMOS （complementary metal-oxide semiconductor） process is 34% smaller than the conventional single-bit antifuse-type OTP memory since the sizes of cell array and row decoder are reduced. And the programming time of the proposed OTP memory is nearly 50% smaller than that of the conventional counterpart since two consecutive bytes can be compressed and programmed into eight OTP cells at once. The layout area is 214 μm× 327 μ,, and the read current is simulated to be 30.4 μA.

主 题 词：multi-bit OTP programming time antifuse memory data compression 

学科分类：08[工学] 081201[081201] 0812[工学-测绘类] 

核心收录：

D　O　I：10.1007/s11771-009-0078-3

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