A novel composite UV/blue photodetector based on CMOS technology:design and simulation

作     者：陈长平 金湘亮 罗均 

作者机构：Faculty of MaterialsOptoelectronics and PhysicsXiangtan University Faculty of Precision Mechanical EngineeringShanghai University 

基　　金：supported by the National Natural Science Foundation of China(Nos.61233010 and 61274043) the Program for New Century Excellent Talents in University of Ministry of Education of China(No.NCET-11-0975) 

出 版 物：《Optoelectronics Letters》 (光电子快报（英文版）)

年 卷 期：2013年第9卷第6期

页      码：414-417页

摘      要：A novel composite ultraviolet(UV)/blue photodetector is proposed in this *** ring-shaped PN junction is used to separate photogenerated carriers and inject the non-equilibrium excess carriers to the bulk,changing the bulk potential and shifting the threshold voltage of the metal-oxide-semiconductor field-effect transistor(MOSFET)as well as the drain *** simulation is carried out,and the simulation results show that the composite photodetector has the enhanced responsivity for UV/blue *** exhibits very high sensitivity to weak and especially ultra-weak light.A responsivity of 7000 A/W is obtained when the photodetector is illuminated under incident optical power of 0.01μ*** a result,this proposed combined photodetector has great potential for UV/blue and ultra-weak light applications.

主 题 词：光电探测器 复合材料 仿真结果 紫外线 CMOS技术 半导体场效应晶体管 光生载流子 设计 

学科分类：08[工学] 0805[工学-能源动力学] 080502[080502] 0803[工学-仪器类] 

核心收录：

D　O　I：10.1007/s11801-013-3149-5

馆 藏 号：203242714...