Analysis of single event transient pulse-width in 65 nm commercial radiation-hardened logic cell

作     者：Haisong Li Longsheng Wu Bo Yang Yihu Jiang 

作者机构：Xi'an Microelectronics Technology Institute 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2017年第38卷第8期

页      码：100-104页

摘      要：With the critical charge reduced to generate a single event effect （SEE） and high working frequency for a nanometer integrated circuit, the single event effect （SET） becomes increasingly serious for high performance SOC and DSP chips. To analyze the radiation-hardened method of SET for the nanometer integrated circuit, the n＋ guard ring and p＋ guard ring have been adopted in the layout for a 65 nm commercial radiation-hardened standard cell library. The weakest driving capacity inverter cell was used to evaluate the single event transient （SET） pulse-width distribution. We employed a dual-lane measurement circuit to get more accurate SET＇s pulse- width. Six kinds of ions, which provide LETs of 12.5, 22.5, 32.5, 42, 63, and 79.5 MeV-cm2/mg, respectively, have been utilized to irradiate the SET test circuit in the Beijing Tandem Accelerator Nuclear Physics National Laboratory. The testing results reveal that the pulse-width of most SETs is shorter than 400 ps in the range of LETefr from 12.5 ***2/mg to 79.5 MeV-cm2/mg and the pulse-width presents saturation tendency when the effective linear energy transfer （LETeff value is larger than 40 MeV-cm2/mg. The test results also show that the hardened commercial standard cell＇s pulse-width concentrates on 33 to 264 ps, which decreases by 40% compared to the pulse-width of the 65 nm commercial unhardened standard cell.

主 题 词：single event effect single event transient radiation-hardened guard ring, standard cell library pulsewidth 

学科分类：080903[080903] 0809[工学-计算机类] 08[工学] 

核心收录：

D　O　I：10.1088/1674.4926/38/8/082019

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