A High Precision CMOS Opamp Suitable for ISFET Readout

作     者：张翀 杨海钢 魏金宝 Zhang Chong;Yang Haigang;Wei Jinbao

作者机构：中国科学院电子学研究所 

基　　金：国家自然科学基金资助项目(批准号:90307014) 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2008年第29卷第4期

页      码：686-692页

摘      要：This paper presents a high precision CMOS opamp suitable for ISFET readout. The opamp is tailored to provide a constant bias condition for ISFET as part of the readout circuits and,hence,is compatible for single chip integration with the sensor. A continuous time auto-zero stabilization technique is studied and employed, with the aim of suppressing the low frequency noises, including the offset voltage, 1/f noise, and temperature drift. The design is based on a 0.35μm CMOS process. With a 3.3V power supply,it maintains a DC open loop gain of more than 100dB and an offset voltage of around 11μV,while the overall power dissipation is only 1.48mW. With this opamp, a pH microsensor is constructed, of which the functionality is verified by experimental tests.

主 题 词：high precision auto-zero operational amplifier ISFET microsensor 

学科分类：080902[080902] 0809[工学-计算机类] 08[工学] 

核心收录：

D　O　I：10.3321/j.issn:0253-4177.2008.04.015

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