A Low-Voltage,High Efficiency Power Generation Structure for UHF RFID

作     者：庞则桂 庄奕琪 李小明 李俊 Pang Zegui;Zhuang Yiqi;Li Xiaoming;Li Jun

作者机构：西安电子科技大学微电子学院宽禁带半导体材料与器件教育部重点实验室西安710071 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2008年第29卷第2期

页      码：293-297页

摘      要：This paper presents a new power generation structure that can provide DC energy for passive UHF RFID with high sensitivity and high efficiency. The structure is designed with 0.18μm standard CMOS technology, including two charge pumps,a current reference, and a group of bias circuits. Low-voltage performance is improved thanks to the bias structure,which eliminates the threshold voltage drop and body-effect of conventional circuits. A 350mV minimum input level is required to generate a 1.5V power supply for a 100k~ load with power conversion efficiency （PCE） of 22%. PCE up to 29.8% is achieved with a 60kΩ load. Simulation results show that the new circuit is superior to conventional charge pumps.

主 题 词：UHF RFID power generation charge pump low voltage CMOS 

学科分类：0810[工学-土木类] 08[工学] 081001[081001] 

核心收录：

D　O　I：10.3321/j.issn:0253-4177.2008.02.019

馆 藏 号：203270934...