Design and fabrication of 25-channel 200 GHz AWG based on Si nanowire waveguides

作     者：李凯丽 张家顺 安俊明 李建光 王亮亮 王玥 吴远大 尹小杰 胡雄伟 LI Kai-li ZHANG Jia-shun AN Jun-ming LI Jian-guang WANG Liang-liang WANG Yue WU Yuan-da YIN Xiao-jie HU Xiong-wei

作者机构：State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences 

基　　金：supported by the National Key Research and Development Program of China(No.2016YFB0402504) the National Natural Science Foundation of China(Nos.61435013 and 61405188) 

出 版 物：《Optoelectronics Letters》 (光电子快报（英文版）)

年 卷 期：2017年第13卷第4期

页      码：241-244页

摘      要：A 25-channel 200 GHz arrayed waveguide grating(AWG) based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the simulation and error analysis of AWG with width fluctuations. The 25-channel 200 GHz AWG exhibits central channel insertion loss of 6.7 dB, crosstalk of-13 dB, and central wavelength of 1 560.55 nm. The error analysis can explain the experimental results of 25-channel 200 GHz AWG well. By using deep ultraviolet lithography(DUV) and inductively coupled plasma etching(ICP) technologies, the devices are fabricated on silicon-on-insulator(SOI) substrate.

主 题 词：阵列波导光栅 硅纳米线 AWG GHz 通道 设计 制作 等离子体刻蚀 

学科分类：0808[工学-自动化类] 070207[070207] 0809[工学-计算机类] 07[理学] 0805[工学-能源动力学] 0702[理学-物理学类] 

核心收录：

D　O　I：10.1007/s11801-017-7076-8

馆 藏 号：203273503...