Azimuthal dependence of single-event and multiple-bit upsets in SRAM devices with anisotropic layout

作     者：张战刚 刘杰 侯明东 孙友梅 苏弘 古松 耿超 姚会军 罗捷 段敬来 莫丹 习凯 恩云飞 ZHANG Zhan-Gang;LIU Jie;HOU Ming-Dong;YAO Hui-Jun;LUO Jie;DUAN Jing-Lai;MO Dan;XI Kai;EN Yun-Fei

作者机构：Institute of Modern Physics Chinese Academy of Sciences University of Chinese Academy of Sciences Science and Technology on Reliability Physics and Application of Electronic Component LaboratoryChina Electronic Product Reliability and Environmental Testing Research Institute 

基　　金：Supported by National Natural Science Foundation of China(Nos.11179003,10975164,61204112 and 61204116) China Postdoctoral Science Foundation(No.2014M552170) 

出 版 物：《Nuclear Science and Techniques》 (核技术（英文）)

年 卷 期：2015年第26卷第5期

页      码：69-75页

摘      要：Experimental evidence is presented showing obvious azimuthal dependence of single event upsets(SEU) and multiple-bit upset(MBU) patterns in radiation hardened by design(RHBD) and MBU-sensitive static random access memories(SRAMs), due to the anisotropic device layouts. Depending on the test devices, a discrepancy from 24.5% to 50% in the SEU cross sections of dual interlock cell(DICE) SRAMs is shown between two perpendicular ion azimuths under the same tilt angle. Significant angular dependence of the SEU data in this kind of design is also observed, which does not fit the inverse-cosine law in the effective LET method. Ion trajectory-oriented MBU patterns are identified, which is also affected by the topological distribution of sensitive volumes. Due to that the sensitive volumes are periodically isolated by the BL/BLB contacts along the Y-axis direction, double-bit upsets along the X-axis become the predominant configuration under normal *** triple-bit upset and quadruple-bit upset patterns are the same under different ion azimuths(Lshaped and square-shaped configurations, respectively). Those results suggest that traditional RPP/IRPP model should be promoted to consider the azimuthal and angular dependence of single event effects in certain *** earth-based evaluation of SEE sensitivity, worst case beam direction, i.e., the worst case response, should be revealed to avoid underestimation of the on-orbit error rate.

主 题 词：SRAM 各向异性 方位角 单事件 翻转 静态随机存取存储器 器件 设计模式 

学科分类：08[工学] 0807[工学-电子信息类] 0827[工学-食品科学与工程类] 0703[理学-化学类] 081201[081201] 0702[理学-物理学类] 0801[工学-力学类] 0812[工学-测绘类] 080102[080102] 

核心收录：

D　O　I：10.13538/j.1001-8042/nst.26.050404

馆 藏 号：203274471...