Design and fabrication of an InP arrayed waveguide grating for monolithic PICs

作     者：潘盼 安俊明 王亮亮 吴远大 王玥 胡雄伟 

作者机构：State Key Laboratory on Integrated OptoelectronicsInstitute of SemiconductorsChinese Academy of Sciences 

基　　金：supported by the National High Technology Research and Development Program of China(No.2011AA010303) the National Natural Science Foundation of China(Nos.61090390,60837001,60877014,60776057) 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2012年第33卷第7期

页      码：65-68页

摘      要：A 10-channel, 200 GHz channel spacing InP arrayed waveguide grating was designed, and the deep ridge waveguide design makes it polarization independent. Under the technologies of molecular beam epitaxy, lithography, and induced coupler plasma etching, the chip was fabricated in our laboratory. The test results show that the insertion loss is about -8 dB, and the crosstalk is less than -17 dB.

主 题 词：InP AWG monolithic PICs polarization independence 

学科分类：0810[工学-土木类] 0808[工学-自动化类] 0809[工学-计算机类] 08[工学] 0805[工学-能源动力学] 0703[理学-化学类] 081001[081001] 0702[理学-物理学类] 

核心收录：

D　O　I：10.1088/1674-4926/33/7/074010

馆 藏 号：203278455...