Design and simulation of nanoscale double-gate TFET/tunnel CNTFET

作     者：Shashi Bala Mamta Khosla 

作者机构：Department of Electronic and Communication Engineering Dr B R Ambedkar Natrional Institute of Technology Jalandhar-144011 India 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2018年第39卷第4期

页      码：34-38页

摘      要：A double-gate tunnel field-effect transistor （DG tunnel FET） has been designed and investigated for various channel materials such as silicon （Si）, gallium arsenide （GaAs）, alminium gallium arsenide （A1xGa1-xAs） and CNT using a nano ViDES Device and TCAD SILVACO ATLAS simulator. The proposed devices are com- pared on the basis of inverse subthreshold slope （SS）, ION/IoFF current ratio and leakage current. Using Si as the channel material limits the property to reduce leakage current with scaling of channel, whereas the A1xGa1-xAs based DG tunnel FET provides a better ION/IOFF current ratio （2.51 × 10^6） as compared to other devices keeping the leakage current within permissible limits. The performed silmulation of the CNT based channel in the double-gate tunnel field-effect transistor using the nano ViDES shows better performace for a sub-threshold slope of 29.4 mV/dec as the channel is scaled down. The proposed work shows the potential of the CNT channel based DG tunnel FET as a futuristic device for better switching and high retention time, which makes it suitable for memory based circuits.

主 题 词：band-to-band tunneling (BTBT) double gate (DG) silicon (Si) gallium arsenide (GaAs) aluminum gallium arsenide (AlxGa1 xAs) tunnel field effect transistor (FET) carbon nanotube (CNT) 

学科分类：080903[080903] 0809[工学-计算机类] 08[工学] 080501[080501] 0805[工学-能源动力学] 080502[080502] 

核心收录：

D　O　I：10.1088/1674.4926/39/4/044001

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