Design of a 2.5GHz Low Phase-Noise LC-VCO in 0.35μm SiGe BiCMOS

作     者：张健 陈立强 李志强 陈普峰 张海英 Zhang Jian;Chen Liqiang;Li Zhiqiang;Chen Pufeng;Zhang Haiying

作者机构：中国科学院微电子研究所北京100029 

基　　金：国家自然科学基金(批准号:60276021) 国家重点基础研究发展规划(批准号:G2002CB311901)资助项目~~ 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2008年第29卷第5期

页      码：827-831页

摘      要：This paper introduces a 2.5GHz low phase-noise cross-coupled LC-VCO realized in 0.35μm SiGe BiCMOS technology. The conventional definition of a VCO operating regime is revised from a new perspective. Analysis shows the importance of inductance and bias current selection for oscillator phase noise optimization. Differences between CMOS and BJT VCO design strategy are then analyzed and the conclusions are summarized. In this implementation, bonding wires form the resonator to improve the phase noise performance. The VCO is then integrated with other components to form a PLL frequency synthesizer with a loop bandwidth of 30kHz. Measurement shows a phase noise of - 95dBc/Hz at 100kHz offset and - 116dBc/Hz at 1MHz offset from a 2.5GHz carrier. At a supply voltage of 3V, the VCO core consumes 8mA. To our knowledge,this is the first differential cross-coupled VCO in SiGe BiCMOS technology in China.

主 题 词：SiGe BiCMOS VCO inductance phase noise 

学科分类：080904[080904] 0809[工学-计算机类] 08[工学] 

核心收录：

D　O　I：10.3321/j.issn:0253-4177.2008.05.003

馆 藏 号：203293866...