Robust photoluminescence energy of MoS_2/graphene heterostructure against electron irradiation

作     者：Shengzhe Hong Deyi Fu Jiwei Hou Duanliang Zhou Bolun Wang Yufei Sun Peng Liu Kai Liu 洪聖哲;傅德颐;侯纪伟;周段亮;王博伦;孙雨飞;柳鹏;刘锴

作者机构：State Key Laboratory of New Ceramics and Fine ProcessingSchool of Materials Science and EngineeringTsinghua UniversityBeijing 100084China Department of PhysicsNational University of Singapore2 Science Drive 3Singapore 117551Singapore Department of Physics and Tsinghua-Foxconn Nanotechnology Research CenterTsinghua UniversityBeijing 100084China 

基　　金：supported by the National Natural Science Foundation of China (11774191, 51727805, and 51672152) the Open Research Fund Program of the State Key Laboratory of LowDimensional Quantum Physics (KF201603) the Thousand Youth Talents Program of China 

出 版 物：《Science China Materials》 (中国科学（材料科学（英文版）)

年 卷 期：2018年第61卷第10期

页      码：1351-1359页

摘      要：Two-dimensional （2D） materials have attracted growing attention since the discovery of graphene [1]. Transition metal dichalcogenide （TMD） semiconductors, such as MoS2 and WS2, became popular materials in recent years, because they usually have intrinsic bandgaps and an in- direct-to-direct bandgap transition from bulk to mono- layer limit [2-6]. Although graphene and TMDs are promising materials in field-effect devices [7-9], their heterostructures are more advanced in charge-splitting functions for the applications in optoelectronic devices [10-15].

主 题 词：异质结器件 电子束辐照 二硫化钼 光能量 石墨 鲁棒特性 MoS2 二维材料 

学科分类：080903[080903] 0809[工学-计算机类] 08[工学] 080501[080501] 0805[工学-能源动力学] 080502[080502] 

核心收录：

D　O　I：10.1007/s40843-018-9255-9

馆 藏 号：203298912...